1998. 6. 15
1/2
SEMICONDUCTOR
TECHNICAL DATA
KTC4376
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 2
HIGH CURRENT APPLICATION.
FEATURES
1W (Mounted on Ceramic Substrate).
Small Flat Package.
Complementary to KTA1664.
MAXIMUM RATING (Ta=25 )
DIM
A
B
D
E
G
H
K
4.70 MAX
2.50 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
1.50 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
SOT-89
C
J
G
D
1
2
3
2. COLLECTOR (HEAT SINK)
A
C
K
J
F
MILLIMETERS
H
1. BASE
3. EMITTER
B
E
F
F
D
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification O:100 200, Y:160 320
P
C
* : KTC4376 mounted on ceramic substrate (250mm
2
x0.8t)
P
Type Name
h Rank
FE
Lot No.
Marking
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
35
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
800
mA
Base Current
I
B
160
mA
Collector Power Dissipation
P
C
500
mW
P
C
*
1
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=35V, I
E
=0
-
-
100
nA
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
100
nA
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=10mA, I
B
=0
30
-
-
V
DC Current Gain
h
FE
(1) (Note)
V
CE
=1V, I
C
=100mA
100
-
320
h
FE
(2)
V
CE
=1V, I
C
=700mA
35
-
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=500mA, I
B
=20mA
-
-
0.5
V
Base-Emitter Voltage
V
BE
V
CE
=1V, I
C
=10mA
0.5
-
0.8
V
Transition Frequency
f
T
V
CE
=5V, I
C
=10mA
-
120
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
13
-
pF
1998. 6. 15
2/2
KTC4376
Revision No : 2
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (mA)
C
h - I
COLLECTOR-EMITTER SATURATION
CE(sat)
COLLECTOR-CURRENT I (mA)
C
V - I
SAFE OPERATING AREA
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
I - V
C
CE
CE
COLLECTOR-EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (mA)
I - V
C
BE
BE
BASE EMITTER VOLTAGE V (V)
C
COLLECTOR CURRENT I (A)
FE
C
CE(sat)
C
VOLTAGE V (V)
C
COLLECTOR POWER DISSIPATION P (W)
0
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
20
40
60
80
100
120
140
160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON CERAMIC
SUBSTRATE
(250mm
x0.8t)
Ta=25 C
2
1
2
1
2
0
0
1
2
3
4
5
6
7
200
400
600
800
1k
0.01
0
0
EMITTER
0.03
0.1
0.3
1
COMMON EMITTER
I /I =25
C
B
0.4
0.8
1.2
1.6
2.0
2.4
200
400
600
800
COMMON EMITTER
V =1V
CE
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
*
I MAX(PULSE)
C
C
I MAX(CONTI-
*
1m
S
*
*
10
m
S
10
0m
S
*
DC O
PERA
TIO
N
COMMON
Ta=25 C
1k
300
1
3
100
7
8
0.05
0.5
Ta=100 C
Ta=25 C
Ta=-25 C
NUOUS)
6
5
4
3
2
0
I =1mA
B
1k
Ta=-25 C
Ta=25 C
Ta=100 C
1k
CE
V =1V
COMMON EMITTER
300
100
50
30
100
30
1
3
10
300
500
10
30
10
Ta
=1
00
C
Ta=25 C
Ta=-25 C
3k
500
1k
300
100
50
10
3
30
0.1
30
10
3
100
1
0.3
2k
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